TITLE

Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques

AUTHOR(S)
Sweeney, Stephen J.; Knowles, Gareth; Sale, Terry E.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p865
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By measuring visible AlGaAs/AlGaInP vertical-cavity surface-emitting lasers (VCSELs) and similar edge-emitting lasers (EELs) as a function of temperature and pressure, we study the contributions of electron leakage and gain-cavity detuning on the threshold current, I[sub th], of VCSELs. In the EELs, leakage accounts for ∼20%I[sub th] at room temperature, rising to ∼70%I[sub th] at 80 °C. Similarly, leakage accounts for almost all of the increase in the VCSEL I[sub th] above -100 °C and limits the cw output power. At low temperature or high pressure, however, the VCSEL I[sub th] increases sharply due to misalignment of the gain peak to the high-energy side of the cavity mode. Under normal operating conditions, carrier leakage has the greatest effect on the VCSELs with gain-cavity detuning only becoming important at very low temperatures. © 2001 American Institute of Physics.
ACCESSION #
4710655

 

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