Atomic-level study of the robustness of the Si(100)-2x1:H surface following exposure to ambient conditions

Hersam, M. C.; Guisinger, N. P.; Lyding, J. W.; Thompson, D. S.; Moore, J. S.
February 2001
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p886
Academic Journal
The in situ hydrogen-passivated Si(100)-2x1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2x1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.). © 2001 American Institute of Physics.


Related Articles

  • Self-assembly of Si nanoclusters on 6H–SiC(0001)-(3×3) reconstructed surface. Ong, W. J.; Tok, E. S.; Xu, H.; Wee, A. T. S. // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3406 

    Scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) were used to observe the formation of metastable (6x6)-Si nanoclusters (diameter ∼16.5±0.1 A) on 6H-SiC(0001)-(3 x 3) surface. STM and XPS data suggest that these clusters are derived from the ejection of the...

  • Photovoltaic characterization of semiconductors with STM. Hagen, T.; Grafström, S.; Kowalski, J.; Neumann, R. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS973 

    Abstract. Surface photovoltage (SPV) provides information on the electronic structure of semiconductor surfaces. Several schemes for measuring SPV with the STM have been realized in the past, using both continuous and modulated illumination. In the latter case the signal also contains...

  • DIFFUSION ON SEMICONDUCTOR SURFACES. Zandvliet, Harold J. W.; Poelsema, Bene; Swartzentruber, Brian S. // Physics Today;Jul2001, Vol. 54 Issue 7, p40 

    Investigates diffusion, binding and atomic interactions for a model system of silicon dimers on semiconductor surface. Equilibrium properties of the silicon-on-silicon system; Bind-state energies of possible bound configuration states; Discussion on atom-tracking scanning tunneling microscopy...

  • Atomic probe imaging of beta-SiC thin films grown on (100) Si. Steckl, A.J.; Mogren, S.A. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1495 

    Investigates atomic-scale imaging on silicon carbide surfaces using scanning tunneling microscopy. Growth of films on silicon substrates; Measurement of the surface atomic spacing; Reason for the strong effect of the larger atomic spacing on the substrate.

  • Scanning tunneling microscope of the `16x2' reconstructed Si(110) surface. Packard, William E.; Dow, John D. // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p994 

    Examines the `16x2' reconstruction of the surface of silicon using scanning tunneling microscopy. Reconstruction and self-organization of atoms and dangling bonds of ideal, abruptly terminated silicon surface into nearly two-dimensional meso-crystals of silicon macromolecules; Deduction of...

  • Correlation between tip-apex shape and surface modification by scanning tunneling microscopy. Heike, Seiji; Wada, Yasuo // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4220 

    Presents a study which demonstrated the correlation between the shape of a probe tip apex for scanning tunneling microscopy and the surface modification patterns on a silicon (111)-7x7 surface by using an in situ tip evaluation technique. Experimental procedures; Results and discussion; Conclusion.

  • STM study of room temperature adsorption of Au on the Si(111)(7x7) surface: evidence for the reaction of Au atoms with Si rest atoms. Chizhov, I.; Lee, G.; Willis, R.F. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1003 

    Abstract. The initial stages of Au adsorption at sub-monolayer coverages on the Si(111)-(7x7) surface at room temperature have been studied by scanning tunneling microscopy (STM). At very low Au coverages (THETA is similar to 0.01 monolayers)STM images show that some of the triangular sub-unit...

  • Scanning tunneling microscopy of undoped GaAs/AlGaAs heterostructures under laser irradiation. Takahashi, T.; Yoshita, M. // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p502 

    Examines the cleaved surfaces of undoped gallium arsenide/aluminum gallium arsenide heterostructures under laser irradiation. Use of scanning tunneling microscopy; Determination of local surface photovoltage on silicon surfaces; Demonstration of laser-assisted STM; Enhancement of tunneling...

  • Observation of step configuration conversion on single-domain Si(001) 1×2 surface by scanning tunneling microscope. Zhou, J. M.; Lin, N.; Guo, L. W.; Zhang, M. H.; Huang, Q.; Cue, N.; Chen, T. // Applied Physics Letters;11/25/1996, Vol. 69 Issue 22, p3336 

    We have observed a conversion of step configuration of 3.5° miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5° miscut Si(001) surface, terraces are spaced by double-atom height steps and all dimer rows, either on the upper...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics