Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

Huang, Yin-Chieh; Liang, Jian-Chin; Sun, Chi-Kuang; Abare, Amber; DenBaars, Steven P.
February 2001
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p928
Academic Journal
Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN multiple quantum wells was investigated using optical transient transmission measurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well width with a value on the order of 3000 cm2/s for a 62 Å well-width sample. © 2001 American Institute of Physics.


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