TITLE

Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells

AUTHOR(S)
Huang, Yin-Chieh; Liang, Jian-Chin; Sun, Chi-Kuang; Abare, Amber; DenBaars, Steven P.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p928
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN multiple quantum wells was investigated using optical transient transmission measurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well width with a value on the order of 3000 cm2/s for a 62 Å well-width sample. © 2001 American Institute of Physics.
ACCESSION #
4710634

 

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