Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition

Kim, Yong; Park, Kyung Hwa; Chung, Tae Hun; Bark, Hong Jun; Yi, Jae-Yel; Choi, Won Chel; Kim, Eun Kyu; Lee, Ju Wook; Lee, Jeong Yong
February 2001
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p934
Academic Journal
Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiO[sub x] interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states. © 2001 American Institute of Physics.


Related Articles

  • Monocliniclike local atomic structure in amorphous ZrO2 thin film. Cho, Deok-Yong; Jung, Hyung-Suk; Kim, Jeong Hwan; Hwang, Cheol Seong // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p141905 

    The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K-edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2...

  • Use of electron-beam charging for in-process inspection of silicide complementary.... Jenkins, K.A.; Agnello, P.D. // Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p312 

    Demonstrates the inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging. Verification on the isolation of the gate electrodes used in the circuits; Nonremoval of the wafers from the clean room; Deposition of the insulating dielectrics and subsequent metal to...

  • Effects of processing conditions on negative bias temperature instability in metal-oxide-semiconductor structures. Lu, D.; Ruggles, G. A.; Wortman, J. J. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1344 

    Radiation from electron beam metallization has been found to result in damage to metal-oxide-semiconductor structures, which, when not properly annealed out, can lead to severe negative bias temperature instability (NBTI), even at room temperature. Similarly, rapid thermal annealing (RTA) after...

  • Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures. Blonkowski, S. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p172903 

    An analytical model for the electric field and temperature dependence of the nonlinear dielectric susceptibility of amorphous oxides is developed and compared with experimental measurements on metal-insulator-metal capacitors. Using the model, experimental capacitance variations with applied...

  • Reduction of interface-state density by F2 treatment in a metal-oxide-semiconductor diode prepared from a photochemical vapor deposited SiO2 film. Inoue, Kohji; Nakamura, Masakazu; Okuyama, Masanori; Hamakawa, Yoshihiro // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2402 

    A new technique for the reduction of the interface-state density Nss of a metal-oxide-semiconductor (MOS) diode has been developed. The SiO2 film was deposited on Si from Si2 H6 and O2 by direct photochemical vapor deposition (CVD) using vacuum ultraviolet (VUV) light of a D2 lamp. The new...

  • Reversible electron-beam writing on a submicron scale in a superionic amorphous film. Oldale, J.M.; Elliott, S.R. // Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1801 

    Investigates the direct writing of patterns in amorphous silver chalcogenide materials by electron-beam exposure. Visualization of silver depletion using transmission electricity microscopy; Effects of electron-beam irradiation on bulk silver-germanium-silicon glasses; Result of the combination...

  • Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing. Kurova, I. A.; Ormont, N. N.; Terukov, E. I.; Trapeznikova, I. N.; Afanas�ev, V. P.; Gudovskikh, A. S. // Semiconductors;Mar2001, Vol. 35 Issue 3, p353 

    The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K...

  • Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy. Frye, R. C.; Kumler, J. J.; Wong, C. C. // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p101 

    We have used photothermal deflection spectroscopy to examine optical absorption in amorphous silicon films using a variety of surface passivation techniques. Absorption coefficients well below the band gap in these films are strongly influenced by surface state densities. Surfaces oxidized by...

  • Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films. Golikova, O. A.; Kazanin, M. M. // Semiconductors;Jun2000, Vol. 34 Issue 6, p737 

    Photosensitivity of amorphous hydrogenated silicon films containing inclusions of Si nanocrystals, along with spectral characteristics of photoconductivity, were studied. A correlation between photosensitivity and features of the Raman spectra was established. The highest photosensitivity is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics