TITLE

Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition

AUTHOR(S)
Kim, Yong; Park, Kyung Hwa; Chung, Tae Hun; Bark, Hong Jun; Yi, Jae-Yel; Choi, Won Chel; Kim, Eun Kyu; Lee, Ju Wook; Lee, Jeong Yong
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p934
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiO[sub x] interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states. © 2001 American Institute of Physics.
ACCESSION #
4710632

 

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