TITLE

Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

AUTHOR(S)
Zangooie, S.; Schubert, M.; Thompson, D. W.; Woollam, J. A.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p937
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm[sup -1]. Due to partial filling of the heavy- and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs. © 2001 American Institute of Physics.
ACCESSION #
4710631

 

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