Magnetic properties of Mn-doped ZnO

Fukumura, T.; Jin, Zhengwu; Kawasaki, M.; Shono, T.; Hasegawa, T.; Koshihara, S.; Koinuma, H.
February 2001
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p958
Academic Journal
We report on the magnetic properties of an oxide-diluted magnetic semiconductor (DMS), Zn[sub 0.64]Mn[sub 0.36]O. The temperature dependence of the magnetization shows a spin-glass behavior with the large magnitude of the Curie-Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than other II-VI DMSs. The small effective Mn moment (x¯∼0.02) under high field also represents a strong antiferromagnetic exchange coupling in this compound. © 2001 American Institute of Physics.


Related Articles

  • Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films. Ayoub, J.-P.; Favre, L.; Berbezier, I.; Ronda, A.; Morresi, L.; Pinto, N. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p141920 

    We investigate the structural and morphological evolutions of Ge1-xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG∼160 °C), Mn atoms incorporated in the matrix...

  • Adjustable nitrogen-vacancy induced magnetism in AlN. Liu, Yu; Jiang, Liangbao; Wang, Gang; Zuo, Sibin; Wang, Wenjun; Chen, Xiaolong // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p122401 

    Nitrogen-vacancy-induced magnetism in AlN is investigated both theoretically and experimentally. First-principles calculations reveal that magnetic coupling between the vacancy-induced moments varies with the vacancy concentration. A sizable ferromagnetic coupling for nitrogen vacancies is...

  • Dilute magnetic semiconductors: Hidden order revealed. Flatté, Michael E. // Nature Physics;Apr2011, Vol. 7 Issue 4, p285 

    The article offers information on the dilute magnetic semiconductors. It states that dilute magnetic semiconductors are considered as semiconductors with high sensitivity to external perturbations and magnetic properties to what semiconductors are responsive. It mentions that dilute magnetic...

  • Hydrostatic Pressure Effect on Magnetic Properties in Diluted Magnetic SemiconductorCd1-xMnxGeP2. Arslanov, Temirlan R.; Mollaev, Akhmedbek Yu.; Kamilov, Ibragimkhan K.; Arslanov, Rasul K.; Zalibekov, Ullubiy Z.; Mamedov, Valery V.; Marenkin, Sergey F.; Varnavsky, Sergey A.; Trukhan, Vladimir M. // International Review of Physics;Aug2012, Vol. 6 Issue 4, p372 

    It was studied the influence of high hydrostatic pressure up to 6 GPa on relative magnetic susceptibility and magnetoresistance in diluted magnetic semiconductor Cd1-xMnxGeP2 with x=0.09-0.225. It is found that type of conductivity varied from semiconductor to metal one with manganese content...

  • Transport and magnetic properties of Ge1-x-y Mnx(Eu,Yb)yTe semimagnetic semiconductors. BRODOWSKA, B.; KURYLISZYN-KUDELSKA, I.; ARCISZEWSKA, M.; DYBKO, K.; DOMUKHOVSKI, V.; DOBROWOLSKI, W.; SLYNKO, V. E.; SLYNKO, E. I.; DUGAEV, V. K. // Materials Science (0137-1339);2008, Vol. 26 Issue 4, p927 

    Transport and magnetic properties of the IV-VI ferromagnetic multinary, mixed compounds Get-xMnx,Te, Get-x-yMnxEuyTe and Ge1-x-yMn,xYbyTe (0.045 ≤ x <≤ 0.47, y < 0.04) were investigated in magnetic fields up to 13 T and in the temperature range 1.6-300 K. The Curie temperatures of...

  • Magnetic properties of Ni-doped MgO diluted magnetic insulators. Ramachandran, S.; Narayan, J.; Prater, J. T. // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p1 

    Magnesium oxide doped with Ni has been studied in two different forms: one in which the Ni ions are incorporated into the substitutional sites and the other in which Ni is present both in substitutional sites and in the form of metallic Ni precipitates embedded in the MgO matrix. Magnetic...

  • Room temperature ferromagnetism in Cr-doped In2O3 on high vacuum annealing of thin films and bulk samples. Kharel, P.; Sudakar, C.; Sahana, M. B.; Lawes, G.; Suryanarayanan, R.; Naik, R.; Naik, V. M. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p09H117 

    We report on the observation of room temperature ferromagnetism in Cr-doped In2O3 bulk samples and spin-coated thin films. The samples showed a clear ferromagnetism above 300 K with magnetic moments of 0.008 and 0.22 μB/Cr at 300 K for the bulk and thin film, respectively, only after high...

  • Dilute magnetic semiconductor nanowires. Kulkarni, J. S.; Kazakova, O.; Holmes, J. D. // Applied Physics A: Materials Science & Processing;Nov2006, Vol. 85 Issue 3, p277 

    Semiconductor materials form the basis of modern electronics, communication, data storage and computing technologies. One of today’s challenges for the development of future technologies is the realization of devices that control not only the electron charge, as in present electronics,...

  • Magnetic Properties of Zn1-xMnxTe1-yOy Alloys. Avdonin, A.; Knoff, W.; Gałązka, R. R. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p916 

    The results of the magnetization and photoluminescence measurements of the Zn1-xMnxTe1-yOy are presented. Under field cooling conditions a phase transition is observed. The dependence of the temperature of transition on oxygen concentration is analyzed. A model is proposed.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics