TITLE

Spatial ordering of stacked quantum dots

AUTHOR(S)
Lee, C.-S.; Kahng, B.; Barabási, A.-L.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p984
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the growth conditions necessary to form an ordered quantum dot crystal by capping spatially ordered quantum dots and growing a new layer of dots on top of the capping layer. Performing Monte Carlo simulations and developing analytic arguments based on the stress energy function, we demonstrate the existence of an optimal capping layer thickness, external flux, and temperature for the formation of quantum dot crystals. © 2001 American Institute of Physics.
ACCESSION #
4710613

 

Related Articles

  • Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays. Muller, Heinz-Olaf; Katayama, Kozo // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5603 

    Presents a study on the influence of both geometric and offset charge disorder of two-dimensional quantum dot arrays, also known as network tunnel junctions, on their Coulomb blockade voltage, using extensive Monte-Carlo simulations. Mosel system and the employed realization of disorder;...

  • Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing. Baskaran, Arvind; Devita, Jason; Smereka, Peter // Continuum Mechanics & Thermodynamics;Jan2010, Vol. 22 Issue 1, p1 

    An efficient method for the simulation of strained heteroepitaxial growth with intermixing using kinetic Monte Carlo is presented. The model used is based on a solid-on-solid bond counting formulation in which elastic effects are incorporated using a ball and spring model. While idealized, this...

  • Monte carlo simulations of growth modes of Pb nanoislands on Si(111) surface. Kuntová, Z.; Chvoj, Z.; Tringides, M.; Yakes, M. // European Physical Journal B -- Condensed Matter;Jul2008, Vol. 64 Issue 1, p61 

    The growth of Pb islands on a Si(111) surface exhibits many interesting properties. For example, the self-assembled process results in a homogeneous distribution of Pb islands with uniform height. The dependence of this height on coverage and temperature can be expressed as a phase diagram [1]....

  • Nonuniform alloying in Ge(Si)/Si(001) quantum dots. Lang, Christian; Nguyen-Manh, Duc; Cockayne, David J. H. // Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7067 

    The composition profile of pyramid shaped Ge(Si)/Si(001) quantum dots has been modeled using a combination of atomistic total energy calculations and a Metropolis Monte Carlo process. The analysis of the non-uniform composition profile has revealed the important, separate roles of the strain...

  • Mechanism for spatial organization in quantum dot self-assembly. Da Gao; Kaczynski, Adam; Jaszczak, John A. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133102 

    Inspired by experimental observations of spatially ordered growth hillocks on the (001) surfaces of natural graphite crystals, a mechanism for spatial organization in quantum dot self-assembly is proposed. The regular arrangement of steps from a screw dislocation-generated growth spiral provides...

  • Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate. Fu, K.; Fu, Y. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181913 

    The growth dynamics of self-assembled GaSb quantum dots (QDs) on GaAs substrate was investigated using kinetic Monte Carlo method. The strain induced by the lattice mismatch between the epitaxial material and the substrate was shown to be directly responsible for the three-dimensional QD...

  • Kinetic Monte Carlo simulation of shape transition of strained quantum dots. Chi-Hang Lam // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064328 

    The pyramid-to-dome transition in GexSi1-x on Si(100) initiated by step formation on pyramidal quantum dots is atomistically simulated using a multistate lattice model in two-dimensions incorporating effective surface reconstructions. Under quasiequilibrium growth conditions associated with low...

  • Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. Buckle, P. D.; Dawson, P. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2555 

    Presents information on a study which compared the results of the excitation density dependent photoluminescence decay and Monte Carlo simulation experiments on self-organized indium arsenide/gallium arsenide quantum dots. Experimental details; Results and discussion; Conclusions.

  • Relative abundance of single and double vacancies in irradiated single-walled carbon nanotubes. Tolvanen, A.; Kotakoski, J.; Krasheninnikov, A. V.; Nordlund, K. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p173109 

    Double and single vacancies differently affect the conductance of carbon nanotubes [G. Gómez-Navarro et al., Nat. Mater. 4, 534 (2005)], so that the exact knowledge of the abundance of these defects is mandatory for an unambiguous interpretation of irradiation-induced changes in nanotube...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics