Resonant Raman scattering on self-assembled GaN quantum dots

Kuball, M.; Gleize, J.; Tanaka, Satoru; Aoyagi, Yoshinobu
February 2001
Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p987
Academic Journal
Self-assembled GaN quantum dots grown on Al[sub 0.15]Ga[sub 0.85]N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al[sub 0.15]Ga[sub 0.85]N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed. © 2001 American Institute of Physics.


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