TITLE

Low-threshold optically pumped λ=4.4 μm vertical-cavity surface-emitting laser with a PbSe quantum-well active region

AUTHOR(S)
Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Lindle, J. R.; Meyer, J. R.; Wu, H. Z.; Xu, G.; Khosravani, S.; Shi, Z.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report pulsed emission from an optically pumped lead-salt vertical-cavity surface-emitting laser with a PbSe/PbSrSe quantum-well active region. The lasing wavelength of λ=4.44 μm is nearly constant over the temperature range 200-280 K, and the threshold is only 10.5 kW/cm2 at 260 K, where the gain peak and cavity mode are in resonance. Over 330 mW of peak power is emitted at 260 K, into a circular beam whose divergence angle increases with pump intensity. © 2001 American Institute of Physics.
ACCESSION #
4710603

 

Related Articles

  • Midinfrared photoluminescence from IV-VI semiconductors grown on silicon. McAlister, D. W.; McCann, P. J.; Namjou, K.; Fang, X. M.; Alkhouli, O.; Wu, H. Z. // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3514 

    Above room temperature continuous wave midinfrared photoluminescence has been observed from PbSe/Pb[sub 1-x]Sr[sub x]Se multiple quantum well structures grown by molecular beam epitaxy on (111) silicon. Emission energy from a sample with 10-nm-thick quantum wells varied from 336.1 to 343.7 meV...

  • The energy spectrum of lead selenide implanted with oxygen. Veis, A. N.; Suvorova, N. A. // Semiconductors;Oct99, Vol. 33 Issue 10, p1072 

    Single-crystal and hot-pressed samples of PbSe:O[sup +] were used to investigate the thermoelectric power and optical reflection spectrum and absorption of this material at 300 K. A quasilocal level associated with oxygen was identified in the valence band of PbSe:O[sup +].

  • Thermoelectric transport in PbSe quantum wells. Rogacheva, Elena I.; Nashchekina, Olga N.; Ol'khovskaya, Svetlana I.; Dresselhaus, Millie S. // AIP Conference Proceedings;6/26/2012, Vol. 1449 Issue 1, p151 

    The objects of the study are KCl/PbSe/EuSe quantum wells with PbSe layer thickness in the range d=5-420 nm. The thickness and temperature (77-300 K) dependences of the thermoelectric properties were obtained. It was established that as d increases to ∼ 20nm, the inversion of the electrical...

  • Quantum Size Effects And Transport Phenomena In PbSe Quantum Wells And PbSe/EuS Superlattices. Rogacheva, E. I.; Nashchekina, O. N.; Ol'khovskaya, S. I.; Sipatov, A. Yu.; Dresselhaus, M. S. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p207 

    It is established that the room-temperature dependences of transport properties on the total thickness of PbSe layers d in PbSe/EuS superlattices exhibit an oscillatory behavior. It is shown that the oscillation period Δd practically coincides with the period of the thickness oscillations...

  • Quantum confinement in two dimensional layers of PbSe/ZnSe multiple quantum well structures. Arivazhagan, V.; Manonmani Parvathi, M.; Rajesh, S.; Sæterli, Ragnhild; Holmestad, Randi // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p242110 

    The structural and optical properties of thermally evaporated PbSe/ZnSe multiple quantum well (MQW) structures as a function of the PbSe quantum well (QW) layer thickness in the range between 2.5 and 10 nm have been investigated. An ordered periodicity in the MQW structure was confirmed by...

  • Optically pumped mid-infrared light emitter on silicon. Elizondo, L. A.; Li, Y.; Sow, A.; Kamana, R.; Wu, H. Z.; Mukherjee, S.; Zhao, F.; Shi, Z.; McCann, P. J. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p104504 

    Characterization of a IV-VI semiconductor structure consisting of a PbSe/PbSrSe multiple quantum well (MQW) active region between distributed Bragg reflectors grown by molecular beam epitaxy on a Si(111) substrate is described. Pulsed photoluminescence (PL) spectra exhibited interband electronic...

  • Apparatus for measuring elastic constants of single crystals by a resonance technique up to 1825 K. Goto, Takayasu; Anderson, Orson L. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1405 

    By holding the rectangular parallelepiped specimen between long, thin alumina buffer rods, we can detect the resonance vibration of a specimen even at temperatures above 1800 K. This new technique, in combination with the theory for the calculation of the resonance frequency spectrum of a...

  • Synthesis and characterization of PbSe quantum dots in phosphate glass. Lipovskii, A.; Kolobkova, E. // Applied Physics Letters;12/8/1997, Vol. 71 Issue 23, p3406 

    Demonstrates the synthesis of lead selenide (PbSe) quantum dots (QD). Usage of phase decomposition of PbSe solid solution; Provision of access to strong quantum refinement by QD; Exhibition of diffraction peaks in QD samples by x-ray measurements.

  • PbSe Quantum Well VECSEL on Si. Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p109 

    Vertical external cavity surface emitting lasers in the wavelength region from 3-5 μm are presented. They are based on PbSe quantum wells grown on Si substrates. As host material Pb1-xEuxSe and Pb1-xSrxSe are used. With Pb1-xSrxSe as host material maximum operation temperatures of 325 K are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics