Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN

Jurse˙nas, S.; Kurilcik, N.; Kurilcik, G.; Zukauskas, A.; Prystawko, P.; Leszcynski, M.; Suski, T.; Perlin, P.; Grzegory, I.; Porowski, S.
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3776
Academic Journal
The high-density effects in the recombination of electron-hole plasma in photoexcited homoepitaxial GaN epilayers were studied by means of transient photoluminescence at room temperature. Owing to the "backward" and "lateral" photoluminescence measurement geometries employed, the influence of stimulated transitions on the decay of degenerate nonthermalized plasma was revealed. The lateral stimulated emission was demonstrated to cause a remarkable increase in the recombination rate on the early stage of the luminescence transient. A delayed enhancement of the stimulated emission due to the cooling of plasma from the initial temperature of 1100 K was observed. After completion of the thermalization process and exhaustion of the stimulated emission, the spontaneous-luminescence decay exhibited an exponential slope that relates to the nonradiative recombination of the carriers. The homoepitaxially grown GaN layer featured a luminescence decay time of 445 ps that implies a room-temperature free-carrier lifetime of 890 ps (considered to be extremely high for undoped hexagonal GaN). © 2001 American Institute of Physics.


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