Instantaneous optical modulation in bulk GaAs semiconductor microcavities

Sanchez, S.; De Matos, C.; Pugnet, M.
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3779
Academic Journal
Picosecond pump-probe experiments at room temperature on a bulk GaAs microcavity are presented. The microcavity device is designed to adjust the cavity mode energy 15 meV below the band gap energy of the intracavity bulk GaAs material. For low pump-energy densities (∼μJ/cm2), ultrafast modulation of the reflectivity is demonstrated due to the purely coherent refractive index change. A 5:1 contrast ratio is achieved and shows the potential of the semiconductor microcavities for implementation in ultrafast all optical switching. © 2001 American Institute of Physics.


Related Articles

  • Generation of ultrashort electrical pulses with variable pulse widths. Keil, U.D.; Gerritsen, H.J. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1629 

    Generates ultrashort electrical pulses with variable pulse widths using coplanar strip lines and waveguides on semi-insulating GaAs substrate. Use of two optical pump beams; Presentation of a method for the generation of subpisecond electrical pulses; Advantages of the method.

  • Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects. Railkar, T. A.; Malshe, A. P.; Brown, W. D.; Hullavarad, Shiva S.; Bhoraskar, S. V. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4766 

    Gallium arsenide (GaAs) is one of the most important materials among the III-V family, especially in view of its applicability to optoelectronic devices. However, it is known that GaAs, unlike silicon (Si), does not possess a stable native oxide that can passivate and protect the surface. This...

  • Femtosecond pulse evolution in GaAs crystal. Kumar, J.; Sen, Pratima // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1049 

    Presents information on a study which investigated the evolution of an ultrashort pulse having frequency spectrum above the band edge in a sample of gallium arsenide crystal. Pulse evolution equation; Model of the semiconductor medium; Results and discussion; Conclusions.

  • Laser Pulse Extraction Without Piezoelectric Ringing.  // Physics Today;Oct90, Vol. 43 Issue 10, p105 

    Reviews Lasermetrics' new 5026L pulse extraction system.

  • Two-photon photoconductivity provides new approach for short-pulse diagnostics.  // Laser Focus World;Oct96, Vol. 32 Issue 10, p11 

    Reports on the development of an autocorrelator featuring a zinc selenide photoconductor that provides an alternative to conventional instruments for femtosecond pulse diagnostics. Who was responsible for the research; Advantages of the device; Capabilities.

  • Monte Carlo investigation of the intrinsic mechanism of subpicosecond pulse generation by nonuniform illumination. Zhou, Xing; Alexandrou, Sotiris; Hsiang, Thomas Y. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p706 

    Presents a study which described a Monte Carlo investigation of the intrinsic mechanism of subpicosecond electrical pulse generation by nonuniform illumination of gallium arsenide semiconductor transmission-line gaps. Information on the methods for subpicosecond electrical pulse generations;...

  • Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch. Cummings, M. D.; Holzman, J. F.; Elezzabi, A. Y. // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3535 

    We present a detailed analysis of the field screening and carrier dynamics which exist in the high-field region of an asymmetrically excited coplanar transmission line. Through time-resolved reflectivity measurements, it is found that the ballistic acceleration of carriers, and subsequent field...

  • Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse. Wu, Minghe; Zheng, Xiaoming; Ruan, Chengli; Yang, Hongchun; Sun, Yunqing; Wang, Shan; Zhang, Kedi; Liu, Hong // Journal of Applied Physics;Jul2009, Vol. 106 Issue 2, p023101 

    The Shockley–Read–Hall model (SRHM) and its simplified model (SSRHM) were used to describe the characteristics of a photoconductive semiconductor switch (PCSS) made from a semi-insulating (SI) gallium arsenide (GaAs) chip, biased at low voltage, and illuminated by a 1.064 μm...

  • Optical switching in a resonant tunneling structure. England, P.; Golub, J.E.; Florez, L.T.; Harbison, J.P. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p887 

    Describes the interaction of light pulses with a gallium arsenide/aluminum arsenide resonant tunneling structure. Demonstration that light with an average power of less than 10 microwatts can induce switching; Change in the optical absorption; Potential applications for the resonant tunneling...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics