Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Johnston, M. D.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A.
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3785
Academic Journal
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe film as well as the slow rise and fall of the voltage. © 2001 American Institute of Physics.


Related Articles

  • Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers. Buca, D.; Holländer, B.; Feste, S.; Lenk, St.; Trinkaus, H.; Mantl, S.; Loo, R.; Caymax, M. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p032108 

    Strain relaxation in patterned Si0.77Ge0.23 stripes grown on Si(001) by chemical vapour deposition was investigated after He+ ion implantation and annealing. Ion channeling measurements indicate asymmetric strain relaxation with a significantly higher residual strain parallel to the stripes than...

  • Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by.... Bohrer, J.; Krost, A. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1072 

    Presents the characteristics of normal InAlAs on InP and inverted InP on InAlAs interface developed by metalorganic chemical vapor deposition. Employment of transmission electron microscopy for comparison; Dissimilarities noted at both interfaces; Measurement of luminescence using a cooled Ge...

  • Step bunching mechanism in chemical vapor deposition of 6H-and 4H-SiC{0001}. Kimoto, Tsunenobu; Itoh, Akira // Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3494 

    Investigates step bunching in chemical vapor deposition of 6H- and 4H-SiC on off-oriented {0001} faces with cross-sectional transmission electron microscopy. Control of incorporation of N, Al, and B impurities by changing the C/Si ratio during CVD growth; Step bunching mechanism; Multiple-step...

  • Comparison of catalytically grown and arc-discharge carbon nanotube tips. Thie⁁n-Nga, Le⁁; Bonard, Jean-Marc; Ga´al, Richard; Forro´, La´szlo´; Hernadi, Klara // Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p850 

    We have performed a detailed transmission electron microscopy study of the tip of carbon nanotubes prepared by chemical vapor deposition (CVD) and by arc discharge. We found that a large proportion of the CVD-grown tubes have well-formed caps but that the graphitization of the walls is far from...

  • Advantage of short over long annealing to activate As implanted in metastable pseudomorphic Ge0.08Si0.92 layers on Si(100). Im, S.; Lie, D. Y. C.; Nicolet, M.-A. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7389 

    Deals with a metastable pseudomorphic Ge[sub0.08]Si[sub0.92] layers grown by chemical vapor deposition on silicon substrate and implanted at room temperature with arsenic ions. Characterization of the damage and strain of the implanted layers before and after annealing; Results of...

  • High-dose Al-implanted 4H-SiC p[sup +]-n-n[sup +] junctions. Kalinina, E.; Kholujanov, G.; Solov'ev, V.; Strel'chuk, A.; Zubrilov, A.; Kossov, V.; Yafaev, R.; Kovarski, A. P.; Hallén, A.; Konstantinov, A.; Karlsson, S.; Adås, C.; Rendakova, S.; Dmitriev, V. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    p[sup +]-n-n[sup +] junctions were fabricated by ion implantation with Al of low-doped epitaxial n layers of 4H-SiC grown by chemical vapor deposition on commercial 4H-SiC wafers both with and without reduction of micropipe densities. It was shown that, using high levels of Al ion doping...

  • Double injection of charge carriers in chemical vapor deposited diamond-based diodes. Weima, J. A.; von Borany, J.; Meusinger, K.; Horstmann, J.; Fahrner, W. R. // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p4047 

    Boron ion implantation of thermochemically polished chemical vapor deposited diamond films with multienergies ranging between 24 and 150 keV and a total dose of about 2 × 10[sup 16] cm[sup -2] is used to get p-type conductivity, n-type conductivity is achieved by lithium ion implantation of...

  • Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Brown, P. D.; Hails, J. E.; Russell, G. J.; Woods, J. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1144 

    The technique of cross-sectional transmission electron microscopy has been used to investigate the defect content of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Growth on {111} oriented substrates invaribly gave rise to...

  • In situ observation on electron-beam-induced chemical vapor deposition by transmission electron microscopy. Matsui, Shinji; Ichihashi, Toshinari // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p842 

    W deposition, using a WF6 source and electron-beam-induced surface reaction, has been studied by transmission electron microscopy (TEM). The initial growth process has been observed in situ by TEM. As a result, it became clear that β-W clusters are formed by electron beam irradiation of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics