TITLE

Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

AUTHOR(S)
Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Johnston, M. D.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3785
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe film as well as the slow rise and fall of the voltage. © 2001 American Institute of Physics.
ACCESSION #
4710598

 

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