TITLE

Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Ã…/s

AUTHOR(S)
Mahan, A. H.; Xu, Y.; Nelson, B. P.; Crandall, R. S.; Cohen, J. D.; Palinginis, K. C.; Gallagher, A. C.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3788
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous-silicon (a-Si:H) is grown by hot-wire chemical vapor deposition (HWCVD) at deposition rates (R[sub d]) exceeding 140 Å/s (∼0.8 μm/min). These high rates are achieved by using multiple filaments and deposition conditions different than those used to produce our standard 20 Å/s material. With proper deposition parameter optimization, an AM1.5 photo-to-dark-conductivity ratio of 10[sup 5] is maintained at an R[sub d] up to 130 Å/s, beyond which it decreases. In addition, the first saturated defect densities of high R[sub d] a-Si:H films are presented. These saturated defected densities are similar to those of the best HWCVD films deposited at 5-8 Å/s, and are invariant with R[sub d] up to 130 Å/s. © 2001 American Institute of Physics.
ACCESSION #
4710596

 

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