Characterization of electron-irradiated n-GaN

Goodman, S. A.; Auret, F. D.; Legodi, M. J.; Beaumont, B.; Gibart, P.
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3815
Academic Journal
Using deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a [sup 90]Sr radionuclide source. The results indicate that the major electron-irradiation-induced defect labeled ER3 is not a single defect level but is made up of at least three defect levels (ER3b-ER3d). One of these defects, ER3d, has an activation energy and introduction rate of 0.22 eV and 0.43 cm-1, respectively. The total introduction rate of the three defects (ER3b-ER3d) is approximately 1.0 cm-1. © 2001 American Institute of Physics.


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