Anomalous phosphorus diffusion in Si during postimplantation annealing

Kim, Ryangsu; Furuta, Yoshikazu; Hayashi, Syunsuke; Hirose, Tetsuya; Shano, Toshihumi; Tsuji, Hiroshi; Taniguchi, Kenji
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3818
Academic Journal
The transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720 °C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P trapping to end-of-range {311} defects and dislocation loops. For As implantation, P segregation was also observed only after 1 min annealing. However, in contrast to the Ge implantation, in the As-implanted samples, significant P depletion occurs in the As-tail region after further annealing. Nonequilibrium simulation that takes into account both Fermi-level and electric field effects shows the P depletion during transient enhanced diffusion. Furthermore, simulation results based on the coexistence of neutral and positively charged phosphorus-interstitial pairs agree well with the obtained experimental results. © 2001 American Institute of Physics.


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