Mismatch and chemical composition analysis of vertical In[sub x]Ga[sub 1-x]As quantum-dot arrays by transmission electron microscopy

Zhang, Qi; Zhu, Jing; Ren, Xiaowei; Li, Hongwei; Wang, Taihong
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3830
Academic Journal
Vertically stacked In[sub x]Ga[sub 1-x]As/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {111} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number. Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. © 2001 American Institute of Physics.


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