TITLE

Mismatch and chemical composition analysis of vertical In[sub x]Ga[sub 1-x]As quantum-dot arrays by transmission electron microscopy

AUTHOR(S)
Zhang, Qi; Zhu, Jing; Ren, Xiaowei; Li, Hongwei; Wang, Taihong
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3830
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vertically stacked In[sub x]Ga[sub 1-x]As/GaAs quantum dots have been fabricated by molecular beam epitaxy. Cross-sectional high resolution electron microscopy analyses demonstrate that the quantum dot size increases, and the interplanar spacings of {111} for quantum dots as well as the mismatch between the quantum dots and the spacer layers, is increased with the layer number. Chemical analysis shows that, as fabrication proceeds, indium content is increased and gallium content is decreased, leading to the changes of mismatch and interplanar spacing for the quantum dots. © 2001 American Institute of Physics.
ACCESSION #
4710580

 

Related Articles

  • Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix. Petrov, V. N.; Polyakov, N. K.; Egorov, V. A.; Cirlin, G. E.; Zakharov, N. D.; Werner, P.; Ustinov, V. M.; Denisov, D. V.; Ledentsov, N. N.; Alferov, Zh. I. // Semiconductors;Jul2000, Vol. 34 Issue 7, p810 

    MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix were studied by high resolution transmission electron microscopy. The properties of the grown structures depend critically on the substrate temperature, growth cycle sequence, and layer thicknesses....

  • Atomically resolved structure of InAs quantum dots. Márquez, J.; Geelhaar, L.; Jacobi, K. // Applied Physics Letters;4/16/2001, Vol. 78 Issue 16, p2309 

    InAs was grown by molecular-beam epitaxy onto GaAs(001) until quantum dots (QDs) formed. At this point, the growth was interrupted and the uncovered QDs were investigated in situ by scanning tunneling microscopy (STM). Atomically resolved STM images of the QDs revealed that four dominating...

  • Influence of a thin ALAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots. Arzberger, M.; Kasberger, U.; Abstreiter, G. // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p3968 

    Investigates the influence of an aluminum arsenide (AlAs) cap layer on the optical properties of molecular beam epitaxy-grown indium arsenide (InAs)/gallium arsenide (GaAs) self-assembled quantum dots. Capping of the InAs islands with a thin AlAs layer before the growth by GaAs; Blueshift of...

  • Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy. Çelebi, C.; Ulloa, J. M.; Koenraad, P. M.; Simon, A.; Letoublon, A.; Bertru, N. // Applied Physics Letters;7/10/2006, Vol. 89 Issue 2, p023119 

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the impact of the capping material on the structural properties of self-assembled InAs quantum dots (QDs) grown on a high index (311)B InP substrate. Important differences were found in the capping process when...

  • Multiple specimen-exchange system for molecular beam epitaxy. Price, G. L. // Review of Scientific Instruments;Dec1986, Vol. 57 Issue 12, p3120 

    A relatively simple and inexpensive specimen-exchange system for molecular beam epitaxy or other similar UHV applications is described. It allows 12 samples to be simultaneously loaded and degassed in UHV.

  • Small band gap bowing in In[sub 1-x]Ga[sub x]N alloys. Wu, J.; Walukiewicz, W.; Yu, K. M.; Ager, J. W.; Haller, E. E.; Lu, Hai; Schaff, William J. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4741 

    High-quality wurtzite-structured In-rich In[sub 1-x]Ga[sub x]N films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the...

  • Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy. Rawdanowicz, T. A.; Iyer, S.; Mitchel, W. C.; Saxler, A.; Elhamri, S. // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p296 

    We report on the electrical characteristics of InSb and n-type doping of InSb layers grown on GaAs substrates using a SnTe captive source by molecular beam epitaxy (MBE). The undoped epilayers are n-type in the temperature range of 10 to 300 K investigated. Doped layer with carrier...

  • Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix. Zhen, Zhao; Bedarev, D. A.; Volovik, B. V.; Ledentsov, N. N.; Lunev, A. V.; Maksimov, M. V.; Tsatsul�nikov, A. F.; Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M.; Kop�ev, P. S. // Semiconductors;Jan1999, Vol. 33 Issue 1, p80 

    The optical properties of structures containing InGaAs quantum dots in GaAs and AlGaAs matrices grown by molecular-beam epitaxy are investigated. It is shown that increasing the In content in the quantum dots has the effect of raising the energy of carrier localization and increasing the energy...

  • Optical gain and lasing in self-assembled InP/GaInP quantum dots. Moritz, A.; Wirth, R.; Hangleiter, A.; Kurtenbach, A.; Eberl, K. // Applied Physics Letters;7/8/1996, Vol. 69 Issue 2, p212 

    Optical gain measurements have been performed on self-assembled InP quantum dots embedded in GaInP. The dots are formed during the growth of InP on GaInP by molecular beam epitaxy due to the strong lattice mismatch and are overgrown with GaInP afterwards. The optical gain spectra show two peaks...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics