TITLE

Multiplication noise of Al[sub x]Ga[sub 1-x]As avalanche photodiodes with high Al concentration and thin multiplication region

AUTHOR(S)
Zheng, X. G.; Sun, X.; Wang, S.; Yuan, P.; Kinsey, G. S.; Holmes, A. L.; Streetman, B. G.; Campbell, J. C.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report that homojunction Al[sub x]Ga[sub 1-x]As avalanche photodiodes (APDs) exhibit very low multiplication noise when the Al content is >=80%. It was also found that, due to nonlocal effects, the multiplication noise decreased as the ionization region thickness was reduced from 0.8 μm to ≤0.2 μm for Al ratios (from 0 to 0.9). The excess noise factor of the thin (140 nm) Al[sub 0.9]Ga[sub 0.1]As APDs is the lowest reported to date for III-V compounds and is comparable to that of Si avalanche photodiodes. © 2001 American Institute of Physics.
ACCESSION #
4710579

 

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