Surface hydrogenation as a method to purify and flatten a silicon surface

Higai, Shin'ichi; Ohno, Takahisa
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3839
Academic Journal
We performed first-principles theoretical calculations and found that the hydrogenation of a Si surface causes the segregation of impurity metal atoms from the subsurface onto the surface top. Since the contamination by metallic impurities is a principal cause of surface defects, it is expected that, by the surface hydrogenation, a highly pure and atomically flat Si surface is realized. © 2001 American Institute of Physics.


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