Frequency behavior and the Mott-Schottky analysis in poly(3-hexyl thiophene) metal-insulator-semiconductor diodes

Meijer, E. J.; Mangnus, A. V. G.; Hart, C. M.; de Leeuw, D. M.; Klapwijk, T. M.
June 2001
Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3902
Academic Journal
Metal-insulator-semiconductor diodes with poly(3-hexyl thiophene) as the semiconductor were characterized with impedance spectroscopy as a function of bias, frequency, and temperature. We show that the standard Mott-Schottky analysis gives unrealistic values for the dopant density in the semiconductor. From modeling of the data, we find that this is caused by the relaxation time of the semiconductor, which increases rapidly with decreasing temperature due to the thermally activated conductivity of the poly(3-hexyl thiophene). © 2001 American Institute of Physics.


Related Articles

  • Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation. Goodman, S. A.; Auret, F. D.; Meyer, W. E. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p1222 

    Presents information on a study that irradiated epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with alpha particle at room temperature using an americium-241 radio nuclide. Experiment details; Result and discussion.

  • Evolution of the electronic structure of cyclic polythiophene upon bipolaron doping. Kundu, K.; Giri, D. // Journal of Chemical Physics;12/22/1996, Vol. 105 Issue 24, p11075 

    The evolution of the electronic structure of cyclic polythiophene (PT) upon bipolaron doping is studied to explore the possibility of uniform charge density ground state in the metallic regime. The ground state geometry of the neutral PT, the structure of a single bipolaron, and the...

  • Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes. Chichibu, S.; Cohen, D. A.; Mack, M. P.; Abare, A. C.; Kozodoy, P.; Minsky, M.; Fleischer, S.; Keller, S.; Bowers, J. E.; Mishra, U. K.; Coldren, L. A.; Clarke, D. R.; DenBaars, S. P. // Applied Physics Letters;7/27/1998, Vol. 73 Issue 4 

    Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping...

  • CuInSe[sub 2] homojunction diode fabricated by phosphorus doping. Kohiki, Shigemi; Nishitani, Mikihiko; Negami, Takayuki; Wada, Takahiro // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1656 

    Fabricates a CuInSe[sub 2] homojunction diode by phosphorus doping into n-type copper-indium-selenide thin films. Preparation of the junction by phosphorus implantation; Deposition of the film by molecular beam epitaxy method; Change of p-type from n-type conduction; Substitution of selenium by...

  • Analysis of conduction mechanisms in annealed .../p-crystalline Si heterojunction diodes for... Marsal, L. F.; Pallares, J. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p1216 

    Presents information on a study which characterized and fabricated annealed amorphous silicon-type crystalline silicon heterojunction diodes for different doping concentrations. Fabrication; Experimental results and discussion; Conclusions.

  • Controlled creation of a carbon nanotube diode by a scanned gate. Freitag, Marcus; Radosavljevic, Marko; Zhou, Yangxin; Johnson, A. T.; Smith, Walter F. // Applied Physics Letters;11/12/2001, Vol. 79 Issue 20, p3326 

    We use scanning gate microscopy to precisely locate the gating response in field-effect transistors (FETs) made from semiconducting single-wall carbon nanotubes. A dramatic increase in transport current occurs when the device is electrostatically doped with holes near the positively biased...

  • Erratum:.  // Applied Physics Letters;5/11/2015, Vol. 106 Issue 19, p1 

    A correction to the article "On the effect of δ-doping in self-switching diodes" by A. Westlund, I. Iñiguez-de-la-Torre and T. González, that was published in the previous issue is presented.

  • Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping. Yuan Zhang; Blom, Paul W. M. // Applied Physics Letters;8/23/2010, Vol. 97 Issue 8, p083303 

    The hole injection in Schottky barriers formed between p-type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that...

  • Photoreflectance of reduced poly 3-methyl thiophene. Yuan, Ren-Kuan; Shen, S. C.; Tomkiewicz, Micha; Ginley, David S. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3932 

    Presents photoreflectance studies of poly 3-methyl thiophene as a function of doping level, temperature and light intensity. Spectral characteristics between the photodoped and electrodoped bipolaron; Analysis of electronic excitations in the polymers; Nature of the electromodulated spectra in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics