Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes

Hansson, G. V.; Ni, W.-X.; Du, C.-X.; Elfving, A.; Duteil, F.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2104
Academic Journal
The temperature dependencies of the current-voltage characteristics and the electroluminescence (EL) intensity of molecular beam epitaxy grown Er/O-doped Si light emitting diodes at reverse bias have been studied. To minimize the scattering of electrons injected from the p-doped Si[sub 1-x]Ge[sub x] electron emitters, an intrinsic Si layer was used in the depletion region. For many diodes, there is a temperature range where the EL intensity increases with temperature. Data are reported for a structure that shows increasing intensity up to 100 °C. This is attributed to an increasing fraction of the pumping current being due to phonon-assisted tunneling, which gives a higher saturation intensity, compared to ionization-dominated breakdown at lower temperatures.


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