Electron energy loss near-edge structures of cubic Si[sub 3]N[sub 4]

Tanaka, Isao; Mizoguchi, T.; Sekine, T.; He, Hongliang; Kimoto, K.; Kobayashi, T.; Mo, Shang-Di; Ching, W. Y.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2134
Academic Journal
Electron energy loss near-edge structures of the newly discovered cubic-Si[sub 3]N[sub 4] at the Si L[sub 2,3], edge and N K edge have been measured. The same edges were calculated using a first-principles supercell approach, including the core-hole interaction. The experimental spectra at the two edges were satisfactorily reproduced by the calculations, confirming that the present calculation has sufficient predictive power. The difference in spectral shapes between c-Si[sub 3]N[sub 4] and β-Si[sub 3]N[sub 4] is more clear for the Si L[sub 2,3], edge. However, the difference cannot be simply explained by the difference in coordination numbers of Si.


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