TITLE

Photoluminescence of nanostructured PbTiO[sub 3] processed by high-energy mechanical milling

AUTHOR(S)
Leite, E. R.; Santos, L. P. S.; Carren˜o, N. L. V.; Longo, E.; Paskocimas, C. A.; Varela, J. A.; Lanciotti, F.; Campos, C. E. M.; Pizani, P. S.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports on a process to prepare nanostructured PbTiO[sub 3] (PT) at room temperature with photoluminescence (PL) emission in the visible range. This process is based on the high-energy mechanical milling of ultrafine PbTiO[sub 3] powder. The results suggest that high-energy mechanical milling modifies the particle's structure, resulting in localized states in an interfacial region between the crystalline PT and the amorphous PT. These localized states are believed to be responsible for the PL obtained with short milling times. When long milling times are employed, the amorphous phase that is formed causes PL behavior. An alternative method to process nanostructured wide-band-gap semiconductors with active optical properties such as PL is described in this letter.
ACCESSION #
4710533

 

Related Articles

  • Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si[sub 0.75]Ge[sub 0.25]O[sub 2]/Si[sub 0.75]Ge[sub 0.25] using various H[sub 2] pressures. Taraschi, Gianni; Saini, Sajan; Fan, Wendy W.; Kimerling, Lionel C.; Fitzgerald, Eugene A. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9988 

    Nanocrystalline Ge in SiO[SUB2] was synthesized by the reduction of Si[SUB0.75]Ge[SUB0.25]O[SUB2] with H[SUB2], at various annealing temperatures (ranging from 700 to 900°C), with various H[SUB2] partial pressures (100% N[SUB2], 6% H[SUB2]:94% N[SUB2], and 100% H[SUB2]), and for a range of...

  • Effect of overgrowth temperature on the photoluminescence of Ge/Si islands. Schmidt, O. G.; Schmidt, O.G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    Ge/Si islands grown with molecular-beam epitaxy at 630 °C are overgrown with Si at different temperatures T[sub cap], and their photoluminescene spectra are recorded. Both the island-related and wetting-layer-related energy transitions redshift with lowered T[sub cap], which is explained by...

  • Influence of surface states on the photoluminescence from silicon nanostructures. Islam, Md. N.; Kumar, Satyendra // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1753 

    We report a phenomenological model to analyze the room temperature photoluminescence (PL) spectra observed from silicon nanostructures. We have explicitly incorporated the effects of localized surface states along with quantum confinement effects to obtain an analytical expression for the...

  • Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation. Hamza, A.V.; Newman, M.W.; Thielen, P.A.; Lee, H.W.H.; Schenkel, T.; McDonald, J.W.; Schneider, D.H. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 3, p313 

    The intense, ultra-fast electronic excitation of clean silicon (100)-(2 � 1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (~ 2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g....

  • Observation of two-step excitation of photoluminescence in silicon nanostructures. Golovan�, L. A.; Goncharov, A. A.; Timoshenko, V. Yu.; Shkurinov, A. P.; Kashkarov, P. K.; Koroteev, N. I. // JETP Letters;11/25/98, Vol. 68 Issue 10, p770 

    Efficient visible-range photoluminescence with photon energy higher than the photon energy of the exciting radiation is observed in nanostructures of porous silicon subjected to heat treatment in vacuum. The photoluminescence intensity is found to be virtually identical for cw and femtosecond...

  • Photoluminescence and passivation of silicon nanostructures. Redman, D.A.; Follstaedt, D.M. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2386 

    Demonstrates the use of a method to fabricate nanometer-scale structures in silicon for photoluminescence studies. Implantation of helium ions to form a dense subsurface layer of small cavities; Failure of the implanted specimens to yield detectable photoluminescence; Production of a blueshift...

  • Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2. Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Sakurai, Yuryo; Nagasawa, Kaya; Ohki, Yoshimichi // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3513 

    Focuses on a study which examined the photoluminescence from silicon clusters in gamma-irradiated amorphous silicon dioxide. Optical properties of silicon nanostructures; Methodology of the study; Results and discussion.

  • Time-resolved photoluminescence of ytterbium-doped nanocrystalline Si thin films. Zhao, Xinwei; Komuro, Shuji // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2151 

    Ytterbium-doped nanocrystalline silicon (nc-Si) thin films were formed on Si and quartz substrates by ablating a Si:Yb[sub 2]O[sub 3] mixture target. The Yb-doped nc-Si showed sharp emission peaks at wavelengths around 1 μm. Time-resolved photoluminescence measurements indicated that the...

  • Blue photoluminescence and local structure of Si nanostructures embedded in SiO[sub 2] matrices. Qi Zhang; Bayliss, S.C. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1977 

    Examines the photolumniscence (PL) and local structure of silicon nanostructures embedded in silicon dioxide matrices. Preparation of nanostructures by radio frequency co-sputtering and nitrogen gas annealing; Dependence of PL excitation on the conduction band density of states; Presence of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics