TITLE

Radiative recombination from InP quantum dots on (100) GaP

AUTHOR(S)
Hatami, F.; Masselink, W. T.; Schrottke, L.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2163
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots is peaked at about 2.0 eV, blueshifted by 0.6 eV from the band gap of bulk InP due to strain, quantum size effects, and possibly Ga interdiffusion.
ACCESSION #
4710526

 

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