Radiative recombination from InP quantum dots on (100) GaP

Hatami, F.; Masselink, W. T.; Schrottke, L.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2163
Academic Journal
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots is peaked at about 2.0 eV, blueshifted by 0.6 eV from the band gap of bulk InP due to strain, quantum size effects, and possibly Ga interdiffusion.


Related Articles

  • Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix. Sizov, D. S.; Samsonenko, Yu. B.; Tsyrlin, G. E.; Polyakov, N. K.; Egorov, V. A.; Tonkikh, A. A.; Zhukov, A. E.; Mikhrin, S. S.; Vasil’ev, A. P.; Musikhin, Yu. G.; Tsatsul’nikov, A. F.; Ustinov, V. M.; Ledentsov, N. N. // Semiconductors;May2003, Vol. 37 Issue 5, p559 

    Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap (Al[SUB0.3]Ga[SUB0.7]As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved) owing to deep localization of carriers in a matrix whose band gap is wider than...

  • Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Adelmann, C.; Brault, J.; Rouvie`re, J.-L.; Mariette, H.; Mula, Guido; Daudin, B. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5498 

    We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C,...

  • Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100). Wang, Zh. M.; Liang, B. L.; Sablon, K. A.; Salamo, G. J. // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p113120 

    Self-assembled nanodrill technology based on droplet epitaxy growth was developed to obtain nanoholes on a GaAs(100) surface. In this technology, the gallium droplets act like “electrochemical drills” etching away the GaAs substrate beneath to give rise to nanoholes more than 10 nm...

  • Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition. X. B. Zhang, M. Riad; Heller, R. D.; Noh, M. S.; Dupuis, R. D.; Walter, G.; Holoyak, N. // Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1349 

    InP self-assembled quantum dots (QDs) were deposited on lattice-matched In[sub 0.5](Al[sub x]Ga[sub 1-x])[sub 0.5]P matrices grown on (001) GaAs substrates by using metalorganic chemical vapor deposition. We found that the Al concentration in the matrix has a great influence on the size of the...

  • Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy. Sun, Z. Z.; Yoon, S. F.; Yew, K. C.; Bo, B. X.; Du An Yan; Tung Chih-Hang // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1469 

    We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ∼170 nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization...

  • Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001). Costantini, G.; Rastelli, A.; Manzano, C.; Songmuang, R.; Schmidt, O. G.; Kern, K.; Känel, H. von // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5673 

    The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both material combinations only two well-defined families of...

  • Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers. Turyanska, L.; Baumgartner, A.; Chaggar, A.; Patanè, A.; Eaves, L.; Henini, M. // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p092106 

    We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection...

  • Resonant x-ray scattering from self-assembled InP/GaAs(001) islands: Understanding the chemical structure of quaternary quantum dots. Coelho, L. N.; Magalhães-Paniago, R.; Malachias, A.; Zelcovit, J. G.; Cotta, M. A. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p021903 

    Lattice parameter profiles and the chemical structure of InP self-assembled islands grown on GaAs(001) were determined with x-ray resonant scattering. By accessing four different photon energies, near x-ray absorption edges of two of the atomic species present on the samples, composition maps of...

  • Mid-infrared electroluminescence from coupled quantum dots and wells. Shields, P. A.; Bumby, C. W.; Li, L. J.; Nicholas, R. J. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2725 

    Room temperature electroluminescence between 1.7–2.6 μm has been observed from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics