Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs-GaAs-InGaAs quantum-well heterostructure laser

Kellogg, D. A.; Holonyak, N.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2202
Academic Journal
Data are presented on coupled ten-stripe AlGaAs-GaAs-InGaAs quantum well heterostructure (QWH) lasers recoupled stochastically at the cleaved end mirrors. Recoupling of neighboring elements of a ten-stripe laser is accomplished by the scattering (random feedback) afforded by applying ∼10-μm-diam Al powder or 0.3 μm α-Al[sub 2]O[sub 3] polishing compound in microscopy immersion oil or in epoxy at the cleaved ends (mirrors). Data on QWH samples with the end mirrors coated with the scatterer (Al or Al[sub 2]O[sub 3] powder in "liquid") exhibit spectral and far-field broadening, as well as increased laser threshold because of the reduced cavity Q. Single mode operation is possible with the conventional evanescent wave coupling of the ten-stripe QWH and is destroyed, even the laser operation itself, with the scattering recoupling (dephasing) at the end mirrors, which is reversible (removable). The narrow ten-stripe QWH laser with strong end-mirror scattering, a long amplifier with random feedback, indicates that a photopumped III-V or II-VI powder (a random "wall" cavity) has little or no merit.


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