Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

McCarthy, L.; Smorchkova, I.; Xing, H.; Fini, P.; Keller, S.; Speck, J.; DenBaars, S. P.; Rodwell, M. J. W.; Mishra, U. K.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2235
Academic Journal
We demonstrate an AlGaN/GaN heterojunction bipolar transistor on a substrate grown using the lateral epitaxial overgrowth (LEO) technique. Common emitter characteristics show a current gain of 3. Active layers were grown by plasma-assisted molecular-beam epitaxy on metal-organic chemical-vapor-deposition-grown templates on sapphire. The collector-emitter leakage mechanism in these devices is found to be local punch-through associated with base layer compensation near the dislocations. LEO wing regions (nondislocated) were found to reduce the emitter-collector leakage by four orders of magnitude over adjacent window regions which had a dislocation density of 10[sup 8] cm[sup -2]. Varying the doping profile through the base confirms that the mechanism for leakage is local punch-through due to compensation. This compensation mechanism is consistent with simulations which assume a donor-state line density of 10[sup 7] cm[sup -1]. The implications of the emitter-collector leakage for dc device characterization are also discussed.


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