Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm

Perera, A. G. U.; Matsik, S. G.; Yaldiz, B.; Liu, H. C.; Shen, A.; Gao, M.; Wasilewski, Z. R.; Buchanan, M.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2241
Academic Journal
Results are presented on the performance of a heterojunction interfacial workfunction internal photoemission (HEIWIP) wavelength-tailorable detector. The detection mechanism is based on free-carrier absorption in the heavily doped emitter regions and internal emission across a workfunction barrier caused by the band gap offset at the heterojunction. The HEIWIP detectors have the high responsivity of free-carrier absorption detectors and the low dark current of quantum well infrared photodector type detectors. For a 70 ± 2 cutoff wavelength detector, a responsivity of 11 A/Wa nd a D[sup *] = 1 x 10[sup 13] cm √Hz/W with a photocurrent efficiency of 24% was observed at 20 µm. From the 300 K background photocurrent, the background limited performance (BLIP) temperature for this HEIWIP detector was estimated to be 15 K. This HEIWIP detector provides an exciting approach to far-infrared detection.


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