TITLE

Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate

AUTHOR(S)
Horita, Susumu; Nakata, Y.; Shimoyama, A.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2250
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film.
ACCESSION #
4710494

 

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