Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate

Horita, Susumu; Nakata, Y.; Shimoyama, A.
April 2001
Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2250
Academic Journal
We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film.


Related Articles

  • Microwave power handling in engineered YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries. Habib, Y. M.; Oates, D. E.; Dresselhaus, G.; Dresselhaus, M. S.; Vale, L. R.; Ono, R. H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Microwave-frequency (rf) power-dependence measurements performed on thin-film YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=2°, 5°, 10°, and 24° are presented. The data are compared to measurements on...

  • Development of near-bamboo and bamboo microstructures in thin-film strips. Walton, D.T.; Frost, H.J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p40 

    Examines the development of near-bamboo and bamboo microstructures in thin-film strips. Methods used to study the microstructural evolution in thin film strips; Factors influencing the transformation of the strip to bamboo structure; Effects of grain boundary grooving.

  • Transmission of phonons through grain boundaries in diamond films. Morelli, D.T.; Uher, C.; Robinson, C.J. // Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1085 

    Examines the transmission of phonons through grain boundaries in high quality diamond films. Impact of grain boundaries and intragrain defects on heat conduction; Measurement of thermal conductivity to eliminate the effects of intragrain defects; Use of calibrated germanium resistance sensors...

  • Superconductor-insulator-superconductor tunneling in Ba[sub 1-x]K[sub x]BiO[sub 3] grain boundaries. Kussmaul, A.; Hellman, E.S. // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2824 

    Examines single grain boundaries of the superconductor Ba[sub 1-x]K[sub x]BiO[sub 3] by growing epitaxial thin films. Demonstration of superconductor-current-voltage characteristics of the boundaries; Formation of superconductor-insulator-superconductor (SIS) tunnel junctions; Consistency of...

  • Heterodyne microwave mixing in a superconducting YBa2Cu3O7-x coplanar waveguide circuit containing a single engineered grain boundary junction. Seed, R. G.; Vittoria, C.; Widom, A. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p6962 

    Presents a study which utilized the nonlinear current-voltage properties of induced grain boundaries in high temperature superconducting YBa[sub2]Cu[sub3]O[sub7-x]. Experimental details; Theoretical modeling; Results and discussion.

  • A closed-form inversion-type polysilicon thin-film transistor dc/ac model considering the kink effect. Chen, S. S.; Shone, F. C.; Kuo, J. B. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1776 

    Describes a closed-form inversion-type polysilicon thin-film transistor (poly-Si TFT) direct current/alternating current model considering kink effect for circuit simulation. Information on poly-Si TFT; Description of the surface electrostatic potential model; Forms of grain in the lateral...

  • Role of grain boundaries on hydrogen-induced degradation in lead zirconate titanate thin films. Lee, Jang-Sik; Joo, Seung-Ki // Applied Physics Letters;10/21/2002, Vol. 81 Issue 17, p3230 

    It is well known that exposing lead zirconate titanate (PZT) thin films to hydrogen severely degrades the electrical properties. This phenomenon has been the subject of intensive study; however, there is no electrical evidence relating the hydrogen-induced degradation with the grain boundaries...

  • Grain boundary trap distribution in polycrystalline silicon thin-film transistors. Dimitriadis, C. A. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p4086 

    Presents information on a study that evaluated the grain boundary trap state density in polysilicon thin-film transistors by a method based on the dependence of the grain boundary potential barrier height on the gate voltage. Research methodology; Results and discussion; Conclusion.

  • Y[sub 1]Ba[sub 2]Cu[sub 3]O[sub 7-x] and LaAlO[sub 3] composite thin films by off-axis magnetron.... Cukauskas, Edward J.; Allen, Laura H. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p389 

    Examines the deposition of Y[sub 1]Ba[sub 2]Cu[sub 3])O[sub 7-x] (YBCO) and LaAlO[sub 3] (LAO) composite thin films by off-axis magnetron sputtering. Dependence of normal state resistivity in LAO composition; Precipitation of LAO along YBCO grains; Formation of LAO in the grain boundaries of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics