TITLE

Monocrystalline silicon carbide nanoelectromechanical systems

AUTHOR(S)
Yang, Y. T.; Ekinci, K. L.; Huang, X. M. H.; Schiavone, L. M.; Roukes, M. L.; Zorman, C. A.; Mehregany, M.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p162
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. © 2001 American Institute of Physics.
ACCESSION #
4710484

 

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