Monocrystalline silicon carbide nanoelectromechanical systems

Yang, Y. T.; Ekinci, K. L.; Huang, X. M. H.; Schiavone, L. M.; Roukes, M. L.; Zorman, C. A.; Mehregany, M.
January 2001
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p162
Academic Journal
SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. © 2001 American Institute of Physics.


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