TITLE

Nano-oxidation of H-terminated p-Si(100): Influence of the humidity on growth and surface properties of oxide islands

AUTHOR(S)
Jungblut, H.; Wille, D.; Lewerenz, H. J.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p168
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanometer-scale oxide islands were formed on p-Si(100) by use of an atomic-force microscope in ambient air. The islands were investigated using contact and friction mode. Volumes were determined from cross-sectional measurements before and after HF etching. A pronounced influence of the relative humidity (h[sub r]) of the ambient air on the size and on the friction behavior of the islands was found. A distinct peak of the size distribution was observed at h[sub r]approx. 85%. The friction images showed a clear contrast inversion at this humidity value. At lower humidities, the friction between tip and oxide was larger than on H-terminated silicon, at higher humidities, it was lower. A condensation mechanism occurring at the meniscus between the tip and H-terminated silicon surface is suggested, which explains the results. © 2001 American Institute of Physics.
ACCESSION #
4710482

 

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