Enhanced oxygen precipitation in silicon due to grown-in spatial inhomogeneities in the oxygen distribution

Wang, Zhihong; Sinno, Talid; Brown, Robert A.
January 2001
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p180
Academic Journal
Fine control of oxygen precipitation during annealing of silicon wafers is required for modern microelectronics processing. We show that the presence of microscopic spatial inhomogeneities in the oxygen concentration caused by fluctuations during crystal growth, can lead to significantly enhanced effective nucleation rates. This effect is demonstrated for a simple nonlinear reaction-diffusion model and then confirmed by simulations of oxide precipitation. © 2001 American Institute of Physics.


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