Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence

Ishii, Masashi; Tanaka, Yoshihito; Ishikawa, Tetsuya; Komuro, Shuji; Morikawa, Takitaro; Aoyagi, Yoshinobu
January 2001
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p183
Academic Journal
In order to discuss the local structure of an optically active center in Er-doped Si thin film, site-selective x-ray absorption fine structure (XAFS) analysis using x-ray-excited optical luminescence was performed. The XAFS spectrum at the Er L[sub III] edge was obtained from the x-ray photon energy dependence of the peak intensity of infrared luminescence due to Er intra-4f transition. Although conventional XAFS measurement analyzes the average structure of all of the Er, this method intrinsically provides structural information for only optically active Er. A broad 2p-5d resonant peak in the site-selective XAFS spectrum is reproduced by a density-of-state calculation of a distorted ErO[sub 6] cluster, assuming an Er transformation from an octahedral center of 0.25 Å. © 2001 American Institute of Physics.


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