TITLE

Effects of biaxial strain and chemical ordering on the band gap of InGaN

AUTHOR(S)
Wright, A. F.; Leung, K.; van Schilfgaarde, M.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p189
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed first-principles calculations to examine the effects of biaxial strain and chemical ordering on the band gap of wurtzite In[sub x]Ga[sub 1-x]N in the range 0≤x≤0.5. Our results for random unstrained alloys are in good agreement with theoretical estimates and measurements on unstrained zinc-blende alloys, but are in poor agreement with recent measurements on strained wurtzite alloys which display significantly lower band gaps. Biaxial strain is found to have a nonlinear effect on alloy band gaps, increasing them for x<0.25 and decreasing them for x>0.25. However, the overall agreement with measurements on wurtzite alloys remains poor. Chemical ordering along the [0001] direction in strained alloys is found to decrease their band gaps considerably, reducing the discrepancy with measurements. We discuss our results with regard to the current understanding of InGaN alloys. © 2001 American Institute of Physics.
ACCESSION #
4710475

 

Related Articles

  • On the Charge Transport Mechanism in n-InSb Films. Nikol�skii, Yu. A. // Semiconductors;Nov2001, Vol. 35 Issue 11, p1252 

    The structure of the conduction band bottom of polycrystalline and recrystallized n-InSb films grown on silicon dioxide substrates has been studied by measuring the temperature dependence of the electrical conductivity in the intrinsic conductivity range. Linear dependences lns = f(10�/T)...

  • Effect of interfacial coupling on photocatalytic performance of large scale MoS2/TiO2 hetero-thin films. Junguang Tao; Jianwei Chai; Lixiu Guan; Jisheng Pan; Shijie Wang // Applied Physics Letters;2015, Vol. 106 Issue 9, p1 

    Interface electronic behavior of two-dimensional large scale MoS2/TiO2 hetero-thin films has been studied using photoemission spectroscopy. We show a clear experimental evidence for type II band alignment and upward band bending (~0.55 eV) at the interface of this system. The valence band offset...

  • Electrical characterization of Er- and Pr-implanted GaN films. Song, S. F.; Chen, W. D.; Chunguang Zhang; Liufang Bian; Hsu, C. C.; Lu, L. W.; Zhang, Y. H.; Jianjun Zhu // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152111 

    Hall, current–voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was...

  • Origin of low threshold field emission from nitrogen-incorporated nanocrystalline diamond films. Ikeda, Tomohiro; Teii, Kungen // Applied Physics Letters;4/6/2009, Vol. 94 Issue 14, p143102 

    Highly conductive, nitrogen-incorporated nanocrystalline diamond films with quasimetallic character emit electrons at low turn-on fields (∼3 V μm-1). These films exhibit stronger delocalization of carriers, indicative of smaller energy separation between the defect bands in the band gap....

  • Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures. Kim, B. K.; Park, J. S.; Kim, D. H.; Chung, K. B. // Applied Physics Letters;5/5/2014, Vol. 104 Issue 18, p1 

    Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films....

  • Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film. Lin, T.; Shang, L.; Zhou, W.; Meng, X.; Sun, J.; Yu, G.; Guo, S.; Chu, J. // Applied Physics A: Materials Science & Processing;Mar2012, Vol. 106 Issue 3, p703 

    The surface transport properties of naturally oxidized p-type HgCdTe thin film were investigated in the magnetic-field region 0-14 T and in the temperature region 8-300 K. The Hall electron concentration increases with temperature, while the surface concentration of the two-dimensional electrons...

  • Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy. J. Tang; L. Y. Deng; C. B. Tay; X. H. Zhang; J. W. Chai; H. Qin; H. W. Liu; T. Venkatesan; S. J. Chua // Journal of Applied Physics;2014, Vol. 115 Issue 3, p1 

    We demonstrated a novel and widely accessible method for determining the electron effective mass and scattering time of ZnO films with different carrier concentrations by combining terahertz time-domain spectroscopy with Hall measurement. The terahertz time domain spectroscopy (THz-TDS)...

  • Experimental determination of the N-p-partial density of states in the conduction band of GaN:... Katsikini, M.; Paloura, E.C.; Moustakas, T. D. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1437 

    Presents a study which investigated the N-p-partial density of states in the conduction band of GaN. What is GaN; Values of the direct band gap of GaN; Experimental conditions; Results of this study.

  • Energy band discontinuities in heterojunctions measured by internal photoemission. Heiblum, M.; Nathan, M. I.; Eizenberg, M. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p503 

    A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics