Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

Schreck, M.; Ho¨rmann, F.; Roll, H.; Lindner, J. K. N.; Stritzker, B.
January 2001
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p192
Academic Journal
It is shown that diamond nucleation on iridium buffer layers followed by an appropriate textured-growth step offers a viable way to realize single-crystal diamond films. Bias-enhanced nucleation on iridium layers results in heteroepitaxial diamond films with highly improved alignment. By a subsequent textured-growth step, the mosaicity can be further reduced for tilt as well as for twist in sharp contrast to former experiments using silicon substrates. Minimum values of 0.17° and 0.38° have been measured for tilt and twist, respectively. Plan view transmission electron microscopy of these films shows that, for low thicknesses (0.6 μm and 8 μm), the films are polycrystalline, consisting of a closed network of grain boundaries. In contrast, at the highest thickness (34 μm) most of the remaining structural defects are concentrated in bands of limited extension. The absence of an interconnected network of grain boundaries shows that the latter films are no longer polycrystalline. © 2001 American Institute of Physics.


Related Articles

  • Controlled rotation of the exchange-bias direction in IrMn/Cu/Co via ion irradiation. Schafer, D.; Geshev, J.; Nicolodi, S.; Pereira, L. G.; Schmidt, J. E.; Grande, P. L. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p042501 

    Co/Cu/IrMn films were irradiated with 40 keV He+ ions varying the fluence and the current, with magnetic field applied at 120° with respect to the original exchange-bias direction. The angular variations of the exchange-bias field of the irradiated samples were compared with those of the...

  • Nucleation and growth of platinum and nickel films on amorphous carbon substrates. Evans, B. L.; Maaroof, A. I.; Xu, S. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p900 

    Presents a study which examined the nucleation and growth of platinum and nickel films deposited on amorphous carbon substrates by ion beam sputtering. Experimental procedure; Measurement of the film thickness; Observations on the films based on transmission electron microscopy; Effect of...

  • The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition. Kroger, R. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1867 

    Examines the role of kinetics in the nucleation and void formation in copper (Cu) films produced by chemical vapor deposition. Use of electron microscopy and atomic force microscopy; Comparison of nucleation densities between titanium-nitride and tantalum; Development of a model for the...

  • Nucleation of amorphous germanium from supercooled melts. Stiffler, S. R.; Thompson, Michael O.; Peercy, P. S. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1025 

    Thin germanium films on SiO2 completely melted by pulsed laser irradiation cool rapidly by thermal conduction to the substrate until they solidify. In situ measurements indicate that the liquid is supercooled by 420–530 K with respect to the crystalline phase prior to solidification....

  • Nucleation in polycrystalline thin films using a preconditioned finite element method. Suess, D.; Tsiantos, V.; Schrefl, T.; Scholz, W.; Fidler, J. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7977 

    The dynamic response of a 80 nm×400 nm×25 nm Co film with and without polycrystalline grains is calculated. The numerical method combines a finite element scheme for space discretization with a preconditioned backward differentiation method for the time integration of the...

  • Role of nucleation sites on the formation of nanoporous Ge. Yates, B. R.; Darby, B. L.; Elliman, R. G.; Jones, K. S. // Applied Physics Letters;9/24/2012, Vol. 101 Issue 13, p131907 

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90° from incidence at 300 keV with fluences ranging...

  • Characteristics of tin whiskers formed on sputter-deposited films -- an aging study. Winterstein, J. P.; LeBret, J. B.; Norton, M. G. // Journal of Materials Research;Mar2004, Vol. 19 Issue 3, p689 

    Tin whiskers formed on sputter-deposited films on Muntz metal substrates have been examined following long-term aging at room temperature. It was found that while the initial annealing conditions determined the original nucleation and growth rates, whisker nucleation and growth was a continuous...

  • The magnetic aftereffect in CoCr films: A model. Lottis, D.; White, R.; Dahlberg, E. Dan // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p5187 

    Presents a study which developed a model of the decay of remanence in magnetic systems and structural spin glass CoCr films. Characteristics of the model; Parameters specified prior to determining the relaxation of the magnetization; Overview of the monotonic behavior of the temperature...

  • Microstructural control of diamond thin films by microlithographic patterning. DeNatale, J. F.; Flintoff, J. F.; Harker, A. B. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4014 

    Presents a study which utilized microlithographic patterning to elucidate the mechanisms controlling diamond film nucleation and grain growth. Experimental details; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics