TITLE

Annealing behavior of implanted helium in indium phosphide

AUTHOR(S)
Simpson, Todd W.; Mitchell, Ian V.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal stability of [sup 3]He implanted into single crystal indium phosphide has been studied as a function of postimplant annealing temperature between 150 and 600 °C and annealing temperature ramp rate in the range 0.1-20 ° C/s. Retention of implanted helium (implant energy 1.0 MeV and fluence 1.0x10[sup 16] cm[sup -2]) is measured via the [sup 3]He(d,p)[sup 4]He nuclear reaction. Helium is shown to be a facile diffuser unless trapped by implantation induced defects. The temperature ramp rate is shown to be a dominant parameter in determining the fraction of implanted helium that becomes trapped in voids. © 2001 American Institute of Physics.
ACCESSION #
4710468

 

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