TITLE

Electrical properties of p-type GaN:Mg codoped with oxygen

AUTHOR(S)
Korotkov, R. Y.; Gregie, J. M.; Wessels, B. W.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p222
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to 2x10[sup 18] cm[sup -3] at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ω cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from 170±5 meV in Mg-doped films to 135±5 meV upon oxygen doping. The higher hole concentration results in part from a decrease in the ionization energy of the acceptor. © 2001 American Institute of Physics.
ACCESSION #
4710463

 

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