Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry

Henkel, T.; Tanaka, Y.; Kobayashi, N.; Tanoue, H.; Hishita, S.
January 2001
Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p231
Academic Journal
The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out diffusion into the annealing ambient and in diffusion into the bulk material was observed. Moreover, beryllium diffuses faster in epitaxial layers than in bulk crystals grown by sublimation. Effective diffusion coefficients with an activation energy of 3.1 eV were determined in bulk crystals in the temperature range 1500-1700 °C. Beryllium is suggested to diffuse via interstitial sites. © 2001 American Institute of Physics.


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