TITLE

Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation

AUTHOR(S)
Corni, F.; Nobili, C.; Tonini, R.; Ottaviani, G.; Tonelli, M.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2870
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermal desorption spectrometry has been applied to investigate the blistering and exfoliation phenomena which occur at the surface of a p-type (100) silicon wafer coimplanted with helium and deuterium. During the heat treatments in linear temperature ramp, an explosive emission of both gases occurs. The phenomenon is kinetically controlled with an effective activation energy of 1.3±0.2 eV. In addition, the desorption spectra present a second contribution, attributed to deuterium emission from buried cavities. Also in this case, the process is kinetically controlled with an effective activation energy of 1.9±0.3 eV. Thermal desorption spectrometry is a suitable technique to have information about various phenomena which occur during blistering and exfoliation. © 2001 American Institute of Physics.
ACCESSION #
4710432

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics