Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

Heikman, Sten; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.
May 2001
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2876
Academic Journal
Ohmic contacts were fabricated for AlGaN/GaN high-electron-mobility transistors by selective-area mass transport regrowth of GaN. The contact resistance ranged from 0.23 to 1.26 Ω mm for different contact areas and geometries. The average resistivity of the autodoped regrown GaN was measured to 4x10[sup -3] Ω cm. Devices with regrown contacts were fabricated, achieving a transconductance of 210 mS/mm. The technique provides a low-cost regrowth process, with applications in particular for high Al-composition AlGaN/GaN devices. © 2001 American Institute of Physics.


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