Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures

Lee, K. J.; Harris, J. J.; Kent, A. J.; Wang, T.; Sakai, S.; Maude, D. K.; Portal, J.-C.
May 2001
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2893
Academic Journal
We have measured the temperature- and field-dependent magnetoresistance in an undoped AlGaN/GaN two-dimensional electron gas sample at temperatures below 10 K. Well-resolved Shubnikov-de Haas oscillations have been observed, as well as spin splitting at magnetic fields above 8 T. The amplitude of the oscillations has been used as a thermometer for the electron temperature, T[sub e], studies as a function of driving current have shown that under high applied electric fields the power input per electron follows a T[sub e][sup 4.4] dependence. Comparison with numerical modeling indicates that in this heterostructure, electron-acoustic phonon scattering via the screened piezoelectric interaction is the dominant energy-loss mechanism at low temperatures. © 2001 American Institute of Physics.


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