TITLE

Low-temperature activation of Mg-doped GaN using Ni films

AUTHOR(S)
Waki, I.; Fujioka, H.; Oshima, M.; Miki, H.; Fukizawa, A.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2899
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The activation of metalorganic chemical vapor deposition-grown Mg-doped GaN by N[sub 2] annealing with a thin Ni film has been investigated. p-type conduction in GaN has been obtained at an annealing temperature as low as 200 °C using the proposed technique. A hole concentration of 2x10[sup 17] cm[sup -3] has been achieved by the annealing at 400 °C. Secondary ion mass spectroscopy measurements have revealed that hydrogen is effectively removed from the Mg-doped GaN layer. These results suggest that the Ni film significantly enhances hydrogen desorption from the GaN film, which results in the activation of Mg-doped GaN at quite low temperatures. © 2001 American Institute of Physics.
ACCESSION #
4710422

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics