TITLE

CaBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films prepared by pulsed laser deposition

AUTHOR(S)
Das, Rasmi R.; Rodriguéz, R. J.; Katiyar, Ram S.; Krupanidhi, S. B.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2925
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of CaBi[sub 2]Ta[sub 2]O[sub 9] (CBT) were deposited on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700 °C. The presence of (115) and (00[UNDRLINE]10[/UNDRLINE]) orientations confirm the phase formation at the lower temperature (500 °C). Microstructure evolution of CBT films with oxygen pressure of 100-200 mTorr at a substrate temperature of 650 °C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650 °C exhibited a maximum polarization of (2P[sub m]) 17 μC/cm[sup 2], remanent polarization of (2P[sub r]) 8 μC/cm[sup 2] and coercive field of (E[sub c]) 128 kV/cm, with fatigue endurance up to 10[sup 10] switching cycles. The higher dielectric constant (∼115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700 °C) was explained by the increased grain size. The higher leakage current density (∼10[sup -7] A/cm[sup 2]) at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate. © 2001 American Institute of Physics.
ACCESSION #
4710412

 

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