TITLE

Luminescence quenching in InAs quantum dots

AUTHOR(S)
Haft, Dirk; Warburton, Richard J.; Karrai, Khaled; Huant, Serge; Medeiros-Ribeiro, Gilberto; Garcia, Jorge M.; Schoenfeld, Winston; Petroff, Pierre M.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2946
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report how photoluminescence from self-assembled InAs quantum dots depend on pumping power and vertical electric field. The InAs dots, which are embedded in a capacitor-like structure, act as efficient trapping centers for excitons. At a high enough electric field, however, the photoexcited electrons tunnel out of the dots fast enough to quench the emission. For samples with two adjacent layers of vertically aligned dots, we find that the threshold voltage for quenching depends very strongly on the optical pumping power. In total contrast to this, we find no comparable effect for samples grown with a single layer of dots. We explain this in terms of efficient storage of electrons and holes in the double-layer samples. © 2001 American Institute of Physics.
ACCESSION #
4710405

 

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