TITLE

Relationship between surface reconstruction and morphology of strained Ga[sub 1-x]In[sub x]P layers grown on GaP (001) by gas-source molecular-beam epitaxy

AUTHOR(S)
Wallart, X.; Deresmes, D.; Mollot, F.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2961
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the growth of strained Ga[sub 1-x]In[sub x]P layers on GaP (001) by gas-source molecular-beam epitaxy for x varying from 0.25 to 1. At a growth temperature of 520 °C, we find two main differences with respect to the well known GaInAs/GaAs system. First, for 0.25≤x≤0.5, we observe the development of wire-like structures oriented along the [110] direction and on the other hand, the growth of InP on GaP leads to the formation of huge dots in small density. The influence of the growth parameters such as the growth temperature or the phosphine flow rate is presented. The whole set of results is discussed in light of recent work on the phosphide surface reconstructions with a particular emphasis on the role of the cation-rich one. © 2001 American Institute of Physics.
ACCESSION #
4710400

 

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