TITLE

Active matrix of amorphous silicon multijunction color sensors for document imaging

AUTHOR(S)
Lemmi, F.; Mulato, M.; Ho, J.; Lau, R.; Lu, J. P.; Street, R. A.; Palma, F.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1334
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An integrated color image sensor, made entirely with amorphous silicon (a-Si:H) large-area technology, is presented. The a-Si:H based sensor is a double-junction p-i-n-i-p photodiode that discriminates two spectral bands according to the bias voltage. The active-matrix addressed array has 512x512 pixels with 75 μm pixel pitch and uses thin-film transistors as pixel switches. The array structure and the spectral response are discussed, and color images taken by the system using two bias voltages demonstrate the compatibility of color sensors with large-area active-matrix addressing techniques. © 2001 American Institute of Physics.
ACCESSION #
4710383

 

Related Articles

  • Image-intensified photodiode array as a fluorescence detector in cw-laser experiments. Hiller, Bernhard; Paul, Phillip H.; Hanson, Ronald K. // Review of Scientific Instruments;Jul1990, Vol. 61 Issue 7, p1808 

    Imaging systems based on image-intensified photodiode-array cameras are excellent detectors for laser-induced fluorescence experiments in fluid mechanics and combustion science. The principles of operation of such a system are described. Special attention is given to the use of an image...

  • Excess noise characteristics of amorphous silicon staircase photodiode films. Sawada, Kazuaki; Akiyama, Masahiro; Ishida, Makoto // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1470 

    Studies the excess noise characteristics of amorphous silicon staircase photodiode films. Correspondence with the measured shot-noise characteristics of the photodiode film to the ideal value calculated as free-excess noise.

  • Blue-enhanced thin-film photodiode for dual-screen x-ray imaging. Vygranenko, Y.; Sazonov, A.; Heiler, G.; Tredwell, T.; Vieira, M.; Nathan, A. // Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263505 

    This article reports on a-Si:H-based low-leakage blue-enhanced photodiodes for dual-screen x-ray imaging detectors. Doped nanocrystalline silicon was incorporated in both the n- and p-type regions to reduce absorption losses for light incoming from the top and bottom screens. The photodiode...

  • Comparison of the picosecond characteristics of silicon and silicon-on-sapphire.... Chia-Chi Wang; Alexandrou, Sotiris // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3578 

    Compares the picosecond characteristics of silicon and silicon-on-sapphire (SOS) metal-semiconductor-metal (MSM) photodiodes. Measurement of the SOS substrates; Effect of experimental conditions on the response of bulk-silicon MSM diodes; Determination of the external quantum efficiency of SOS...

  • Spatial Non-uniformity Measurements of Large Area Silicon Photodiodes. Durak, Murat; Samadov, Farhad; Turkoglu, A. Kamuran // Turkish Journal of Physics;2002, Vol. 26 Issue 5, p375 

    Presents a study which examined the technique and the results of the uniformity mapping of large area research-grade silicon photodiodes which were measured on the purpose-built set-up. Aspect desired in photometry; Factor that has been designed to scan the photodiode surface; Definition of...

  • GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm. Temkin, H.; Pearsall, T. P.; Bean, J. C.; Logan, R. A.; Luryi, S. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p963 

    Properties of GexSi1-x strained-layer p-i-n detectors, in which the strained-layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum...

  • A 75 GHz silicon metal-semiconductor-metal Schottky photodiode. Alexandrou, Sotiris; Chia-Chi Wang; Hsiang, Thomas Y.; Liu, M.Y.; Chou, S.Y. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2507 

    Focuses on the ultra fast characteristics of crystalline-silicon metal-semiconductor-metal photodiodes with 300 nm finger width. Examination of the light-intensity dependence at different wavelengths; Generation of electrical responses; Demonstration of the fastest silicon photodetector.

  • A new photometric detector in the visible spectral range based on a silicon photodiode. Bergbauer, R.; Bremer, C.; Grell, E. // Review of Scientific Instruments;Nov93, Vol. 64 Issue 11, p3289 

    From the equivalent circuit of a photodiode it is shown that the light-induced current of the photodiode is expected to be characterized by a linear function of the light intensity in a range of eight decades. The electrical circuit of the detector based on a silicon photodiode (S1722-02;...

  • Lateral coupling between a silicon-oxinitride waveguide and an amorphous Si photodiode. Kapser, K.; Deimel, P. P. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3614 

    Provides information on a study that report the integration of a silicon-oxinitride optical waveguide and an a-Si:H p-i-n photodiode. Details on the deposition of the oxinitride waveguide; Characteristics of the detector layer; Result of the experiment.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics