A growth method for creating arrays of atomically flat mesas on silicon

Lee, Doohan; Blakely, Jack M.; Schroeder, Todd W.; Engstrom, J. R.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1349
Academic Journal
We describe a method for producing arrays of atomically flat mesa structures on Si(111) through the deposition of Si on a lithographically patterned substrate in the temperature range 750-850 °C. The Si source was a supersonic beam of Si[sub 2]H[sub 6]. With an appropriate choice of substrate temperature and deposition rate, the atomic steps initially present on each mesa surface move by a step flow process to the trenches, which define the mesa leaving the surface as one extensive exposed atomic plane or terrace. The rate of clearing is believed to be limited by the velocity of step bunches. When the terraces become sufficiently large, nucleation of stacks of monoatomic islands occurs. Comparison is made with a previously developed evaporation method for making step-free surfaces. © 2001 American Institute of Physics.


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