TITLE

Room-temperature epitaxial growth of CeO[sub 2](001) thin films on Si(001) substrates by electron beam evaporation

AUTHOR(S)
Ami, T.; Ishida, Y.; Nagasawa, N.; Machida, A.; Suzuki, M.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of CeO[sub 2](001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO[sub 2](001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 °C with a Si(001)-2x1, 1x2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by θ/2θ-scan and φ-scan of x-ray diffraction. © 2001 American Institute of Physics.
ACCESSION #
4710372

 

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