Sb enhancement of lateral superlattice formation in GaInP

Fetzer, C. M.; Lee, R. T.; Jun, S. W.; Stringfellow, G. B.; Lee, S. M.; Seong, T. Y.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1376
Academic Journal
Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [1¯10] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [1¯10]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [1¯10] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration. © 2001 American Institute of Physics.


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