Wavelength control from 1.25 to 1.4 μm in In[sub x]Ga[sub 1-x]As quantum dot structures grown by metal organic chemical vapor deposition

Passaseo, A.; Maruccio, G.; De Vittorio, M.; Rinaldi, R.; Cingolani, R.; Lomascolo, M.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1382
Academic Journal
This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 μm at room temperature. Efficient stacking of dots emitting at 1.3 μm is also demonstrated. © 2001 American Institute of Physics.


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