Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

Kaschner, A.; Lu¨ttgert, T.; Born, H.; Hoffmann, A.; Egorov, A. Yu.; Riechert, H.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1391
Academic Journal
Recombination processes in Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs MQWs is attributed to nitrogen fluctuations. © 2001 American Institute of Physics.


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