Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation

Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1397
Academic Journal
The reliability of electroluminescence from metal-oxide-silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples. © 2001 American Institute of Physics.


Related Articles

  • Hot carrier recombination model of visible electroluminescence from metal-oxide-silicon tunneling diodes. Liu, C. W.; Liu, C.W.; Chang, S. T.; Chang, S.T.; Liu, W. T.; Liu, W.T.; Chen, Miin-Jang; Miin-Jang Chen; Lin, Ching-Fuh; Ching-Fuh Lin // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    We report the visible electroluminescence at room temperature from metal-oxide-silicon tunneling diodes. As biased in the Fowler-Nordheim regime, the electrons tunnel from the gate electrode through the ultrathin oxide and reach the Si anode with sufficiently high energy. The hot electrons cause...

  • Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes. Lin, C.-H.; Lee, M. H.; Liu, C. W. // Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p637 

    Metal-oxide-silicon tunneling diodes with SiO[sub 2]/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal...

  • Carrier tunneling and device characteristics in polymer light-emitting diodes. Parker, I. D. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1656 

    Presents a study which examined electron carrier tunneling and device characteristics in polymer light-emitting diodes. Experimental details; Results and discussion; Improvement of device performance.

  • Enhanced electroluminescence from the fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode. Li, B. K.; Wang, M. J.; Chen, K. J.; Wang, J. N. // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p062101 

    The effect of fluorine-plasma (F-plasma) implantation on the current-voltage (I-V) and electroluminescence (EL) characteristics of Ni/Au-AlGaN/GaN Schottky diodes have been investigated. The observed EL spectrum is dominated by the GaN near band edge emissions. The threshold current of the EL...

  • Efficient light emission by impact ionization in single-barrier tunneling devices. Snow, E. S.; Kirchoefer, S. W.; Campbell, P. M.; Glembocki, O. J. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2124 

    Efficient band-gap electroluminescence has been observed in n+-n--n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field...

  • Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure. Li, Y. B.; Cockburn, J. W.; Skolnick, M. S.; Duck, J. P.; Birkett, M. J.; Larkin, I. A.; Grey, R.; Hill, G.; Hopkinson, M. // Applied Physics Letters;4/27/1998, Vol. 72 Issue 17 

    This letter reports the observation of intersubband electroluminescence from a single-period resonant tunneling structure. Intersubband emission (λapprox. 8.4 μm), with a full width at half maximum of 7 meV, was observed from a GaAs/AlGaAs triple barrier structure with quantum well widths...

  • Electroluminescence from bipolar resonant tunneling diodes. Van Hoof, C.; Genoe, J. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p77 

    Examines the resonant tunneling of electrons in semiconductor heterostructures. Incorporation of aluminum arsenide/gallium arsenide (GaAs) resonant tunneling structure inside a GaAs p-n junction; Achievement of peak-to-valley ratio in electroluminescence intensity; Observation of hole resonant...

  • Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes. Yang, Q. K.; Fuchs, F.; Schmitz, J.; Pletschen, W. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4757 

    Trap centers with an energy level positioned 1/3 of the band gap below the effective conduction band edge are observed in the electroluminescence spectra of InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 11 µm. The trap centers are recognized by simulating the...

  • Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes. Liang, Eih-Zhe; Su, Ting-Wei; Lin, Ching-Fuh // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p054509 

    The carrier dynamics of electroluminescent metal-oxide-semiconductor silicon tunneling diodes is rigorously modeled in this study. Various tunneling and recombination current densities are formulated without using the Maxwell-Boltzmann approximation for the carrier concentrations. This model...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics